Developing a model for calculation of the stress-strain states in semiconductor structures due to laser processing
Abstract
Developing a model for calculation of the stress-strain states in semiconductor structures due to laser processing
Incoming article date: 26.05.2014A model is presented for the calculation of thermoelastic stress and displacement in semiconductor structures
due to laser processing. Developed software based on the model allows to determine the optimal parameters of laser processing with taking into account the physical and topological parameters of the structure. The model is divided into two tasks: the non-stationary heat conduction equation is solved, and the equilibrium equations and Hooke's law. For equations solution was used the finite difference method.Keywords: Laser processing, thermal stress, finite difference method