The simulation of the process of the electrically active impurities relocation in the electric field of Schottky diode space charge region has been made. The analysis of the simulation results shows the possibility of controlled alloying impurities relocation on the depth about tens of nanometers caused by electrically active atoms diffusion in the electric field of Schottky diode space charge region.

Keywords: diffusion, space charge region, Schottky diode

The peculiarities of modification of silicon’s surface structure by the electric disintegration were researched. It was established that the electric disintegration of sensitive layer’s surface increases its effective area and the density of surface state. It also forms the deep energy levels in the forbidden zone of the semiconductor which are conditioned by atoms of the electrode’s material and by dislocation. In total it makes possible to modify the sensitivity and selectivity of gas sensors.

Keywords: modification of surface, sensitive layer, gas sensor, electric disintegration

The mathematical model of the potential distribution in the semiconductor surficial region in the presence of deep-lying levels in its forbidden zone which specified by multiple-charge impurity centers has been developed. The simulation results can be used for the width of the space charge region estimation, for the prognostication of the most probable mechanism of the charge carriers transfer in metal-semiconductor structure with multiple-charge deep-lying levels and also for the prognostication of the barrier capacitance value. It can be used in the development of solid-state electronic devices with improved values of some parameters.

Keywords: Poisson’s equation, multiple-charge impurity center, potential distribution, deep-lying levels