The paper analyzes the output parameters of field-effect transistors with a contact gate (controlled junction (p-n junction or Schottky gate)) both from modern highly mobile semiconductors (such as AIIIBV, AIIBVI, etc.) and semiconductors such as Si, Ge. It is shown that when the span regions are reduced to micro- and nanoscale values and conditions for the action of strong electric field strengths arise, it is necessary to take into account the dependence of carrier mobility on this field. Comparative analyses of the obtained results with the classical known ratios are carried out.

Keywords: effective mass, drift velocity, electric field strength, mobility of charge carriers, kinetic energy, current-voltage characteristic, field-effect transistor, sub-gate drift region, threshold field of the Gann effect, saturation field strength