The possibilities of a little-studied method for obtaining nanosized materials of electronic engineering with a given substructure, the zone sublimation epitaxy (ZSE) method, are discussed. In the work, it is combined with the method of gradient liquid phase epitaxy (GLE). A specific feature is mass transfer in a two-phase medium (a solid substrate and an inert gas phase acting as a transport medium) with preliminary deposition of a matrix layer formed from the melt. A feature of the sublimation process in the study was the crystallization of low-melting iron-silicon eutectic. A mathematical model of the process was proposed and compared with the experimental results. Island structures of the composition silicon (more than 90%), iron (up to 8%) and chromium (about 1.5%) have been obtained. Their parameters and size distribution were studied. A Solver-HV scanning probe microscope and a Quanta-200 scanning electron microscope were used. The study shows that the use of sublimation transfer transients makes it possible to reproducibly form doped silicon nanolayers and transform them into regular mesostructures.

Keywords: microsize growth cell method, zone sublimation epitaxy, gradient liquid phase epitaxy, island nanostructures

The results of a theoretical and experimental study of the synthesis of GaInAsBi thin-film structures formed on InAs substrates in the field of a temperature gradient are discussed. The features of interfacial interaction in the In-As-Sb system in the presence of isovalent solvents (In, Bi) have been studied. The values ​​of the interaction parameters and the distribution coefficients of the system components are determined. Optimal technological modes for obtaining InAs-based heterostructures are presented. The properties of the surface of epitaxial layers are studied experimentally. It was found that the main control parameters are the temperature of thermomigration and its gradient. It is shown that the synthesized semiconductor materials can be effectively used in electronic devices of a new generation - electro-optical modulators and supersensitive sensor elements.

Keywords: epitaxial structure, crystallization, recrystallization, melt, segregation coefficient, organometallic compound, voltage sensitivity, near infrared range, solid solution, optical characteristic

The paper studies the liquid-phase epitaxy processes of a new material of infrared optoelectronics - indium arsenide doped with bismuth using a stepwise thermal field. An analysis of the phase equilibrium during the growth of a solid solution is carried out. The possibility of the formation of a mesostructure (modulation of the composition along the growth coordinate) is shown. The problems of defect formation in composite layers grown from a melt are considered. Ways of decreasing the dislocations density in gradient layers are discussed. A relatively simple method for controlling the thermal field of temperature in the crystallization zone and a new technological procedure for the sequential crystallization of solid solutions with a mesostructure have been developed.

Keywords: solid solutions, liquid-phase epitaxy, indium arsenide, mesostructure, stepwise thermal field, dislocation generation

The paper contains an analysis of the results of experiments on obtaining radiative structures based on gallium antimonide, formed by the method of thermal melt migration in a semiconductor matrix. The epitaxial process modes within the selected range were optimized for such parameters as the wavelength corresponding to the fundamental transition, a small lattice discrepancy, a small discrepancy in the coefficients of thermal expansion of the growing TP and the matrix. An original effect is described - an increase in the solubility of the Bi content in solid solutions, isoperiodic binary compounds A3B5 under conditions of a gradient temperature field. This effect allows a wide variation in the optical parameters of the element base of instruments based on solid solutions of GaSbBi / GaSb. The mechanisms of the generation of dislocations in a crystallized solid solution and the features of electrophysical and photoelectric parameters are analyzed. A structural solution of a light-emitting diode with strip geometry is proposed.

Keywords: solid solutions, recrystallization, gradient liquid-phase epitaxy, thermomigration, indium antimonide-bismuthide, melt thickness, temperature gradient, components, growth coordinate, epitaxial layers

In this paper, the modeling of phase equilibria in multicomponent systems of A3B5 compounds was carried out and the compositions of the liquid phase equilibrated with a given solid solution were calculated. A model of excess thermodynamic functions is used, which takes into account the formation of associates in the melt near the solidus temperatures. The developed algorithm allows solving a direct problem (in which the input parameters are the growth temperature of the layers and the composition of the solid phase corresponding to the expected instrument characteristics) and the inverse problem (the growth temperature and composition of the solid solution are sought for the given liquid phase). The limiting concentrations of the alloying components, arsenic and bismuth, are determined. The structural and electrophysical characteristics of multicomponent semiconductor A3B5 heterosystems are discussed, the solid solutions of which crystallize from the liquid phase in a gradient thermal field. The mechanism for introducing impurities into the lattice of epitaxial layers of multicomponent solid solutions is described for the first time. With an increase in the thickness of the crystallizable film, the thermodynamically equilibrium substitution by antimony bismuth atoms is completed and the introduction of Bi atoms into the interstices takes place. The interaction of neighboring atoms with the valence electron shells of Bi becomes more symmetrical, which causes an increase in concentration. The concentration of film defects near its rear surface also increases. The obtained values of electrophysical parameters make it possible to draw a conclusion about the instrumental suitability of the materials under study.

Keywords: solid solutions, mesostructure, antimonide, alloying, liquid phase, phase transformations, binary compounds, associates, lattice constant, multicomponent systems

The paper contains an analysis of the results of experiments on obtaining radiative structures based on gallium antimonide, formed by the method of thermal melt migration in a semiconductor matrix. The epitaxial process modes within the selected range were optimized for such parameters as the wavelength corresponding to the fundamental transition, a small lattice discrepancy, a small discrepancy in the coefficients of thermal expansion of the growing TP and the matrix. An original effect is described - an increase in the solubility of the Bi content in solid solutions, isoperiodic binary compounds A3B5 under conditions of a gradient temperature field. This effect allows a wide variation in the optical parameters of the element base of instruments based on solid solutions of GaSbBi / GaSb. The mechanisms of the generation of dislocations in a crystallized solid solution and the features of electrophysical and photoelectric parameters are analyzed. A structural solution of a light-emitting diode with strip geometry is proposed.

Keywords: thermomigration, solid solutions, gradient epitaxy, diode with fine mes, gallium antimonide, fundamental transition, photoluminescence spectra